Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
نویسندگان
چکیده
منابع مشابه
Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy
Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 ̋C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data wa...
متن کاملPhysical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent bias on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show...
متن کاملDevelopment of Diamond Schottky Barrier Diode
Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...
متن کاملTemperature Dependence of I-V Characteristics of Au/n-Si Schottky Barrier Diode
The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic ene...
متن کاملTransient spectroscopy with a current-switched semiconductor diode laser
We describe transient spectroscopic measurements with a current-switched semiconductor diode laser. Following a fast pulse modulation in the injection current of the diode laser, the diode laser frequency is switched by a few hundred MHz and, then, is scanned over 10 GHz range in a short-time evolution (<0.5 μs). Free-induction decay based on the frequency switching and transient absorption spe...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4913575